Physical origin of the D X center
- 29 August 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 749-751
- https://doi.org/10.1063/1.99821
Abstract
When intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in GaAlAs alloys, whereas the donor states associated to the Γ and X valleys remain shallow. This result accounts for the behavior of the so‐called DX center.Keywords
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