Charged steps on III-V compound semiconductor surfaces

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Abstract
The electrical charge of steps on (110) surfaces of InP, GaP, and GaAs is probed by scanning tunneling microscopy. It is demonstrated that step edges, with and without kinks, are charged and have localized defect states in the band gap. The charge of indium-terminated step edges on p-type doped InP(110) after annealing is found to be independent of the step orientation, while a strong orientation dependence is observed for phosphorus-terminated steps. This is explained by a partial compensation of the charge due to rebonding after phosphorus desorption. The magnitude of charge is estimated to be in the range of +1e to +3e per lattice spacing. © 1996 The American Physical Society.