Fully Silicided NiSi:Hf–LaAlO$_3$/SG–GOI n-MOSFETs With High Electron Mobility
- 26 July 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 25 (8) , 559-561
- https://doi.org/10.1109/led.2004.832527
Abstract
We have integrated the low work function NiSi:Hf gate on high-/spl kappa/ LaAlO/sub 3/ and on smart-cut Ge-on-insulator (SC-GOI) n-MOSFETs. At 1.4-nm equivalent oxide thickness, the NiSi:Hf-LaAlO/sub 3//SC-GOI n-MOSFET has comparable gate leakage current with the control Al gate on LaAlO/sub 3/-Si MOSFETs that is /spl sim/5 orders of magnitude lower than SiO/sub 2/. In addition, the LaAlO/sub 3//SC-GOI n-MOSFET with a metal-like fully NiSi:Hf gate has high peak electron mobility of 398 cm/sup 2//Vs and 1.7 times higher than LaAlO/sub 3/-Si devices.Keywords
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