Atomic rearrangement of the SiO2-stripped Si(001) surface by thermal annealing
- 31 July 1992
- journal article
- Published by Elsevier in Ultramicroscopy
- Vol. 42-44, 1360-1365
- https://doi.org/10.1016/0304-3991(92)90449-t
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Direct observation of SiH3 on a 1%-HF-treated Si(111) surface by scanning tunneling microscopyApplied Physics Letters, 1991
- Comparison of Si(111) surfaces prepared using aqueous solutions of NH4F versus HFApplied Physics Letters, 1991
- Structure of the H-saturated Si(100) surfacePhysical Review Letters, 1990
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990
- Hydrogen terminated Si(100) surfaces studied by scanning tunneling microscopy, x-ray photon spectroscopy, and Auger electron spectroscopyJournal of Vacuum Science & Technology A, 1990
- New versatile room-temperature field ion scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Chemical and electronic structure of the SiO2/Si interfaceMaterials Science Reports, 1986
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Unusually Low Surface-Recombination Velocity on Silicon and Germanium SurfacesPhysical Review Letters, 1986
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986