The quantum Hall effect in modulation doped In0.53Ga 0.47As-InP heterojunctions
- 1 January 1982
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 43 (16) , 613-616
- https://doi.org/10.1051/jphyslet:019820043016061300
Abstract
We report the first observation of the quantum Hall effect in modulation doped In0.53Ga0.47As-InP heterojunctions at 4.2 and 1.5 K. The results are then compared to data obtained in a GaAs-Al xGa1-xAs heterojunction having similar electronic characteristicsKeywords
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