On the growth of gallium phosphide layers on gallium phosphide substrates by MOVPE
- 1 January 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (1) , 25-31
- https://doi.org/10.1007/bf02655340
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Properties of thin strained Ga(As,P) layersPhysical Review B, 1988
- Crystallographic Defects in (001) GaAs Epitaxial Layers Grown by MOCVDJournal of the Electrochemical Society, 1987
- On the influence of surface reconstruction on crystal growth processesSurface Science, 1985
- Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation DependenceJournal of the Electrochemical Society, 1983
- The preparation of device quality gallium phosphide by metal organic chemical vapor depositionJournal of Crystal Growth, 1982
- Electrical and optical properties of deep levels in MOVPE grown GaAsJournal of Crystal Growth, 1981
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- MO-CVD growth of GaP and GaAlPJournal of Crystal Growth, 1981
- Formation of submicron growth defects during vapour deposition of GaAs filmsCrystal Research and Technology, 1980
- GaAs Epitaxy by a Molecular Beam Method: Observations of Surface Structure on the (001) FaceJournal of Applied Physics, 1971