Growth of InSb using tris(dimethylamino)antimony and trimethylindium
- 30 May 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (22) , 3021-3023
- https://doi.org/10.1063/1.111391
Abstract
We have grown epitaxial layers of InSb on p−‐InSb substrates by metalorganic chemical vapor deposition using tris(dimethylamino)antimony (TDMASb) and trimethylindium (TMIn). Growth temperatures from 285 to 500 °C and pressures from 76 to 660 Torr have been investigated. The V/III ratio was varied from 0.63 to 8.6 using growth rates from 0.06 to 0.67 μm/h. For temperatures ≤425 °C, the growth rate was proportional to the temperature. The growth rate was proportional to the TMIn flow at all temperatures. Temperatures ≳400 °C produced p‐type layers while growth temperatures ≤400 °C produce n‐type layers. The pyrolysis temperature of TDMASb appears to be lower than that of TMIn.Keywords
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