The growth of InSb using alternative organometallic Sb sources
- 1 March 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 128 (1-4) , 511-515
- https://doi.org/10.1016/0022-0248(93)90377-9
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Ultra-low temperature OMVPE of InAs and InAsBiJournal of Electronic Materials, 1992
- Growth and characterization of indium arsenide thin filmsJournal of Electronic Materials, 1991
- Triisopropylantimony for organometallic vapor phase epitaxial growth of GaSb and InSbApplied Physics Letters, 1991
- High-mobility InSb grown by organometallic vapor phase epitaxyApplied Physics Letters, 1991
- Low-temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimonyApplied Physics Letters, 1991
- Epitaxial growth of high-mobility GaAs using tertiarybutylarsine and triethylgalliumApplied Physics Letters, 1990
- Low Pressure Mocvd Growth of InSbMRS Proceedings, 1990
- The Preparation of InAsSb/InSb SLS and InSb Photodiodes by MOCVDMRS Proceedings, 1990
- Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVDJournal of Electronic Materials, 1989
- Comparison of alternate As-sources to arsine in the MOCVD growth of GaAsJournal of Crystal Growth, 1988