Low Pressure Mocvd Growth of InSb
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectorsIEEE Electron Device Letters, 1989
- Strain relief in compositionally graded InAsxSb1−x buffer layers and InAsxSb1−x/InSb strained-layer superlattices grown by MOCVDJournal of Crystal Growth, 1988
- New method of characterizing majority and minority carriers in semiconductorsApplied Physics Letters, 1987
- Growth of InSb and InAs1 − x Sb x by OM‐CVDJournal of the Electrochemical Society, 1984