Charge exchange mechanisms of slow states in Si/SiO2
- 1 August 1993
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 22 (1-4) , 231-234
- https://doi.org/10.1016/0167-9317(93)90164-z
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Observation of near-interface oxide traps with the charge-pumping techniqueIEEE Electron Device Letters, 1992
- 'Border traps' in MOS devicesIEEE Transactions on Nuclear Science, 1992
- Effect of radiation-induced charge on 1/f noise in MOS devicesIEEE Transactions on Nuclear Science, 1990
- ac conductance measurements on radiation-damaged (100) Si/SiO2 interface after defect transformationApplied Physics Letters, 1990
- Hysteresis and Franck-Condon relaxation in insulator-semiconductor tunnelingPhysical Review B, 1990
- Interface trap transformation in radiation or hot-electron damaged MOS structuresSemiconductor Science and Technology, 1989
- Individual defects at the Si:SiO2interfaceSemiconductor Science and Technology, 1989
- Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured AnnealingIEEE Transactions on Nuclear Science, 1986
- Theory of tunneling into interface statesSolid-State Electronics, 1970
- Tunnelling from a Many-Particle Point of ViewPhysical Review Letters, 1961