Direct Growth of AlGaAs/GaAs Single Quantum Wells on GaAs Substrates Cleaned by Electron Cyclotron Resonance (ECR) Hydrogen Plasma
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1B) , L91-93
- https://doi.org/10.1143/jjap.33.l91
Abstract
Direct growth of AlGaAs/GaAs single quantum wells (SQWs) on GaAs substrates without growing buffer layers is carried out by using electron cyclotron resonance (ECR) hydrogen plasma cleaning. SQW structures are successively grown by molecular beam expitaxy (MBE) after the cleaning process without breaking the vacuum. Photoluminescence shows intense and narrow spectra, in clear contrast to that of conventional thermal cleaning. Atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS) analyses show that surface roughness and interface impurity accumulations are significantly reduced as well. A flat and clean surface obtained by plasma cleaning improves the quality of grown layers.Keywords
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