Electrical properties of epitaxially grown InAs0.61P0.39 films

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Abstract
Study has been made on the effect of the hydrogen carrier gas flow rate on the electron concentration and electron mobility of seven epitaxially grown (undoped) InAs0.61P0.39 samples. The H2 flow rates were varied in the range from 1780 to 515 cm3/min. The electron mobility was found to vary from 7800 to 11300 cm2/V s, and the electron density varied from 1.43×1016 to 1.92×1016 cm−3 at 77 K. Resistivity and Hall effect measurements yielded the Hall coefficient, electron density, and electron mobility as a function of temperature (3 to 300 K) for these specimens. the activation energy of the shallow donor states, the density of donor and acceptor impurities, and the scattering mechanisms (polar optical mode and ionized impurity scatterings) for electrons were analyzed. It was found that the impurity hopping conduction dominates for T<20 K.

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