Modeling Si/Si1−xGex heterojunction bipolar transistors
- 1 July 1992
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 35 (7) , 921-926
- https://doi.org/10.1016/0038-1101(92)90319-8
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistorsIEEE Electron Device Letters, 1991
- Predicted propagation delay of Si/SiGe heterojunction bipolar ECL circuitsIEEE Journal of Solid-State Circuits, 1990
- Heterojunction bipolar transistors using Si-Ge alloysIEEE Transactions on Electron Devices, 1989
- Numerical simulation and comparison of Si BJTs and Si/sub 1-x/Ge/sub x/ HBTsIEEE Transactions on Electron Devices, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- High-speed performance of Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistorsIEEE Electron Device Letters, 1989
- Two-dimensional analysis of the surface recombination effect on current gain for GaAlAs/GaAs HBTsIEEE Transactions on Electron Devices, 1988
- GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter processIEEE Electron Device Letters, 1986
- High-frequency characteristics of AlGaAs/GaAs heterojunction bipolar transistorsIEEE Electron Device Letters, 1984