Observation of a metallic impurity band inn-type GaAs
- 15 August 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (5) , 3179-3182
- https://doi.org/10.1103/physrevb.42.3179
Abstract
Magnetotransport and far-infrared spectroscopy are combined to probe the electronic states in the vicinity of the magnetic-field-induced metal-insulator transition in n-type GaAs. Resonant absorption lines, identified as the shallow-donor 1s-2p transitions by their selection rules, magnetic-field dependence, and temperature dependence are observed even in the metallic state. These results demonstrate that, near the metal-insulator transition, the electrons are in the donor impurity band, which is split off from the conduction band.Keywords
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