Bulk trap formation by high temperature annealing of buried thermal oxides [SIMOX]
- 1 December 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (6) , 1708-1716
- https://doi.org/10.1109/23.488769
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structuresJournal of Applied Physics, 1995
- Deep and Shallow Electron Trapping in the Buried Oxide Layer of SIMOX StructuresJournal of the Electrochemical Society, 1994
- Paramagnetic defect centers in BESOI and SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1993
- Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygenIEEE Transactions on Nuclear Science, 1993
- Defect electrical conduction in SIMOX buried oxidesIEEE Transactions on Electron Devices, 1993
- Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxidesIEEE Transactions on Nuclear Science, 1992
- Electron spin resonance of separation by implanted oxygen oxides: Evidence for structural change and a deep electron trapApplied Physics Letters, 1992
- Self-diffusivity of network oxygen in vitreous SiO2Applied Physics Letters, 1984
- Theory of Isothermal Currents and the Direct Determination of Trap Parameters in Semiconductors and Insulators Containing Arbitrary Trap DistributionsPhysical Review B, 1973
- Electronic Processes and Excess Currents in Gold-Doped Narrow Silicon JunctionsPhysical Review B, 1961