Post-implantation as an aid in scale calibration for SIMS depth profiling

This publication has 8 references indexed in Scilit:

• Tilted angle implantations of B, Al and Ga in single crystalline Si
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
• Field-induced segregation effects during secondary-ion mass spectrometry depth profiling of Cu and Na implanted in silicon
  Applied Physics Letters, 1989
• Determination of 2D implanted ion distributions using inverse radon transform methods
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
• Results of a SIMS round robin sponsored by ASTM committee E‐42 on surface analysis
  Surface and Interface Analysis, 1989
• Quantification of sputter depth profiles by means of wedge crater sputtering—a new technique for depth scale calibration
  Surface and Interface Analysis, 1988
• Reflection of heavy ions
  Zeitschrift für Physik B Condensed Matter, 1986
• Quantitative SIMS Depth Profiling of Semiconductor Materials and Devices
  Published by Springer Nature ,1986
• In-Situ Laser Measurements of Sputter Rates During SIMS/AES In-Depth Profiling
  Published by Springer Nature ,1984