GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices
- 1 March 1992
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 21 (3) , 347-353
- https://doi.org/10.1007/bf02660465
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- An evaporated aluminum metallization for high efficiency GaAs solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Si as a diffusion barrier for Ge/GaAs heterojunctionsApplied Physics Letters, 1990
- High-efficiency (>20% AM0) GaAs solar cells grown on inactive-Ge substratesIEEE Electron Device Letters, 1990
- High-efficiency GaAs/Ge monolithic tandem solar cellsIEEE Electron Device Letters, 1988
- Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxyJournal of Crystal Growth, 1987
- 21% (one sun, air mass zero) 4 cm2 GaAs space solar cellsApplied Physics Letters, 1986