X-ray characterization of epitaxially grown dilute magnetic semiconductors Zn1 − xFexSe(0 ⩽ x ⩽ 0.22)
- 1 October 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 164, 111-114
- https://doi.org/10.1016/0040-6090(88)90118-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Molecular beam epitaxial growth and characterization of the dilute magnetic semiconductor Zn1−xFexSeApplied Physics Letters, 1987
- Diluted magnetic semiconductors: Issues and opportunitiesJournal of Vacuum Science & Technology A, 1986
- Double-crystal x-ray topographic studies of bulk and epitaxially grown ZnxCd1−xTe (0.0≤x≤0.06)Applied Physics Letters, 1986
- X-ray determination of dislocation density in epitaxial ZnCdTeApplied Physics Letters, 1985
- The estimation of dislocation densities in metals from X-ray dataActa Metallurgica, 1953