Effect of growth interruption on performance of AlGaAs/InGaAs/GaAs quantum well lasers
- 1 December 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 145 (1-4) , 907-910
- https://doi.org/10.1016/0022-0248(94)91162-2
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- The effect of growth interruption on the photoluminescence linewidth of GaAs/InGaAs quantum wells grown by molecular beam epitaxyJournal of Crystal Growth, 1993
- Growth of InGaAs/GaAs quantum wells with perfectly abrupt interfaces by molecular beam epitaxyApplied Physics Letters, 1993
- Formation and morphology of InAs/GaAs heterointerfacesPhysical Review B, 1992
- Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxyApplied Physics Letters, 1992
- Role of GaAs bounding layers in improving OMVPE growth and performance of strained-layer inGaAs/AIGaAs quantum-well diode lasersJournal of Electronic Materials, 1991
- Characterization and determination of the band-gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum wellApplied Physics Letters, 1991
- Growth and analysis of quantum well structuresJournal of Crystal Growth, 1991