Role of GaAs bounding layers in improving OMVPE growth and performance of strained-layer inGaAs/AIGaAs quantum-well diode lasers
- 1 November 1991
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (11) , 929-934
- https://doi.org/10.1007/bf02816034
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Organometallic vapor phase epitaxy of high-performance strained-layer InGaAs-AlGaAs diode lasersIEEE Journal of Quantum Electronics, 1991
- InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiencyApplied Physics Letters, 1990
- Low degradation rate in strained InGaAs/AlGaAs single quantum well lasersIEEE Photonics Technology Letters, 1990
- Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiencyApplied Physics Letters, 1989
- Strained-layer InGaAs-GaAs-AlGaAs graded-index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- Long-lived InGaAs quantum well lasersApplied Physics Letters, 1989
- InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor depositionApplied Physics Letters, 1989
- Continuous operation of high-power (200 mW) strained-layer Ga 1−x In x As/GaAs quantum-well lasers with emission wavelengths 0.87 ≤ λ ≤ 0.95 μmElectronics Letters, 1988
- The effect of lattice mismatch on the dynamical microstructure of III–V compound surfacesJournal of Vacuum Science & Technology A, 1987
- Graded-index separate-confinement InGaAs/GaAs strained-layer quantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1986