Progress in Low-Power Switched Optical Interconnects
- 6 December 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 17 (2) , 357-376
- https://doi.org/10.1109/jstqe.2010.2081350
Abstract
Optical links have successfully displaced electrical links when their aggregated bandwidth-distance product exceeds ~100 Gb/s-m because their link energy per bit per unit distance is lower. Optical links will continue to be adopted at distances of 1 m and below if link power falls below 1 pJ/bit/m. Providing optical links directly to a switching/routing chip can significantly improve the switched energy/bit. We present an early experimental switched CMOS-vertical-cavity surface-emitting laser (VCSEL) system operating at Gigabit Ethernet line rates that achieves a switched interconnect energy of less than 19 pJ/bit for a fully nonblocking network with 16 ports and an aggregate capacity of 20 Gb/s/port. The CMOS-VCSEL switch achieves an optical bandwidth density of 37 Gb/s/mm2 even when operating at a modest line rate of 1.25 Gb/s and is capable of scaling to much higher peak bandwidth densities (~350 Gb/s/mm2) with 5-10 pJ/switched bit. We also review a silicon photonic system design that will lower link energies to 300 fJ/bit, while providing multiterabits per second per square millimeter bandwidth densities. This system will ultimately provide switched optical interconnect at less than a picojoule per switched bit and computer/router system energies of tens of picojoule per bit. We review progress made to date on the silicon photonic components and analyze an energy and bandwidth-density roadmap for future advances toward these goals.Keywords
This publication has 44 references indexed in Scilit:
- Ultra-low capacitance and high speed germanium photodetectors on siliconOptics Express, 2009
- 42 GHz pin Germanium photodetector integrated in a silicon-on-insulator waveguideOptics Express, 2009
- Monolithically integrated high-speed CMOS photonic transceiversPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- CMOS Photonics for High-Speed InterconnectsIEEE Micro, 2006
- A 1.6 Gb/s, 3 mW CMOS receiver for optical communicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 1-Gb/s, 0.7-μm CMOS optical receiver with full rail-to-rail output swingIEEE Journal of Solid-State Circuits, 1999
- A 1-Gb/s monolithically integrated silicon NMOS optical receiverIEEE Journal of Selected Topics in Quantum Electronics, 1998
- Optoelectronic VLSI switching chip with greaterthan 1 Tbit/s potential optical I/O bandwidthElectronics Letters, 1997
- A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- A monolithic silicon photodetector/amplifier IC for fiber and integrated optics applicationJournal of Lightwave Technology, 1985