Monolithically integrated high-speed CMOS photonic transceivers

1 September 2008

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 19492081,p. 362-364
https://doi.org/10.1109/group4.2008.4638200

Abstract

We demonstrate monolithically integrated 4×10 Gb/s WDM transceivers built in a production 130 nm SOI CMOS process. Only light sources are external to the chip. 40 Gb/s error-free, bidirectional transmission is demonstrated.

Keywords

CMOS INTEGRATED CIRCUITS
PHOTONICS
TRANSCEIVERS
WAVELENGTH DIVISION MULTIPLEXING
OPTICAL WAVEGUIDES
OPTICAL DEVICE FABRICATION
OPTICAL FIBER TESTING

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