Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si
- 12 March 2004
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (11)
- https://doi.org/10.1103/physrevb.69.115205
Abstract
No abstract availableKeywords
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