Dopant redistribution in heavily doped silicon: Confirmation of the validity of the vacancy-percolation model
- 15 July 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (2) , 970-972
- https://doi.org/10.1063/1.343476
Abstract
This communication discusses the physical origin of the diffusion enhancement observed by various authors at high doping levels during the annealing of dopant-implanted silicon. It is shown that the experimental results can be accounted for by the percolation model previously developed for high-concentration phosphorus diffusion. A quantitative treatment is given in the case of the diffusion of implanted Sb in heavily doped n-type silicon.This publication has 7 references indexed in Scilit:
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