Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy
- 15 July 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (2) , 763-767
- https://doi.org/10.1063/1.357778
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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