Characterization of boron-doped silicon epitaxial layers by x-ray diffraction
- 13 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (19) , 2129-2131
- https://doi.org/10.1063/1.104982
Abstract
Heavily boron-doped (Na≳1×1019 cm−3)Si epilayers grown on (100)Si by molecular beam epitaxy are investigated using double-crystal x-ray diffractometry. The variation of the Si lattice constant as a function of boron concentration is obtained from a combination of (400) rocking curve analysis and secondary-ion mass spectrometry measurements on uniformly doped epilayers. This result is then used to determine the concentration profile in nonuniformly doped structures via dynamical simulations of experimental x-ray rocking curves. The structures investigated include a pipi doping superlattice and the results are found to be in excellent agreement with secondary-ion mass spectrometry depth profiles.Keywords
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