Schottky barrier height enhancement of n-In0.53Ga0.47As by a novel chemical passivation technique
- 15 May 1990
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (10) , 6571-6573
- https://doi.org/10.1063/1.345138
Abstract
A novel method of enhancing Schottky barrier height, while reducing the surface‐state density on n‐type In0.53Ga0.47 As surfaces using P2S5/(NH4)2S and (NH4)2Sx passivation is described in this communication. The current‐voltage and capacitance‐voltage characteristics show that passivated diodes have lower reverse leakage current and higher effective barrier height than that of the unpassivated diodes. The electrical characteristics of passivated diodes have not changed after one month of exposure to the air.This publication has 13 references indexed in Scilit:
- A study of new surface passivation using P2S5/(NH4)2S on GaAs Schottky barrier diodesJournal of Applied Physics, 1990
- Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlatticeApplied Physics Letters, 1989
- Schottky and field-effect transistor fabrication on InP and GaInAsApplied Physics Letters, 1988
- A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength PhotodetectorsJournal of the Electrochemical Society, 1982
- Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometryJournal of Applied Physics, 1982
- Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitanceIEEE Journal of Quantum Electronics, 1981
- Ga0.47In0.53As: A ternary semiconductor for photodetector applicationsIEEE Journal of Quantum Electronics, 1980
- Increasing the effective barrier height of Schottky contacts to n –In
x
Ga
1−
x
AsElectronics Letters, 1978
- Velocity-field characteristics of Ga1−xInxP1−yAsy quaternary alloysApplied Physics Letters, 1977
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973