Mid-gap level in SiGe alloys

This publication has 20 references indexed in Scilit:

• The Growth of Novel Silicon Materials
  Physics Today, 1986
• Indirect band gap and band alignment for coherently strained ${\mathrm{Si}}_{\mathrm{x}}$${\mathrm{Ge}}_{1\mathrm{-}\mathrm{x}}$ bulk alloys on germanium (001) substrates
  Physical Review B, 1986
• Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's
  IEEE Electron Device Letters, 1986
• Measurement of the band gap of GexSi1−x/Si strained-layer heterostructures
  Applied Physics Letters, 1985
• Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
  Physical Review Letters, 1985
• Modulation doping in GexSi1−x/Si strained layer heterostructures
  Applied Physics Letters, 1984
• Raman scattering from GexSi1−x/Si strained-layer superlattices
  Applied Physics Letters, 1984
• GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxy
  Journal of Vacuum Science & Technology A, 1984
• Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substrates
  Thin Solid Films, 1977
• A one-dimensional SiGe superlattice grown by UHV epitaxy
  Applied Physics A, 1975