Growth of Buffer Layers on Si Substrate for High-Tc Superconducting Thin Films
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5R) , 934-938
- https://doi.org/10.1143/jjap.30.934
Abstract
We have investigated the crystalline properties and surface morphology of the buffer layers of Y2O3, ZrO2 and Y2O3/ZrO2 on a Si(100) substrate for a superconducting thin film. The results of RHEED and X-ray diffraction indicate the hetero-epitaxial growth of buffer layers on Si(100) substrates. Epitaxial planes of the buffer layers on the Si(100) surface are (110), (100) and (100)/(100) for Y2O3, ZrO2 and Y2O3/ZrO2, respectively. YBa2Cu3O7-x thin films have been grown on Si with each buffer layer. The highest critical temperature obtained was 88 K on the Si with the Y2O3/ZrO2 buffer layer.Keywords
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