A note on the pressure dependence of the EL2 level in Gallium Arsenide
- 30 April 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 46 (4) , 305-307
- https://doi.org/10.1016/0038-1098(83)90657-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Trends with alloying for deep impurities in Ga1−xAlxAsSolid State Communications, 1981
- Deep-level optical spectroscopy in GaAsPhysical Review B, 1981
- Pressure dependence of the energy levels of irradiation-induced defects in GaAsApplied Physics Letters, 1981
- Uniaxial stress dependence of the « EL2 » and « EL3 » deep levels in bulk GaAsRevue de Physique Appliquée, 1980
- Pressure dependence of the deep level associated with oxygen in n-GaAsApplied Physics Letters, 1978
- Extrinsic photoconductivity in high-resistivity GaAs doped with oxygenApplied Physics Letters, 1977