MgO-free surface of Mg-doped LPE InGaAs on InP
- 1 March 1984
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 66 (2) , 475-476
- https://doi.org/10.1016/0022-0248(84)90234-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- LPE Growth Techniques for Fabricating Abrupt Zinc‐ and Magnesium‐Doped p+‐n InGaAsP / InP HeterojunctionsJournal of the Electrochemical Society, 1982
- Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxySolid-State Electronics, 1982
- Cd-Doping in InxGa1-xAsyP1-y Mixed Semiconductors Grown by Liquid-Phase EpitaxyJapanese Journal of Applied Physics, 1981
- LPE growth of GaxIn1-xAs layers on InP under PH3 partial pressure and results on Mg-dopingJournal of Crystal Growth, 1981
- Properties of Zn-Doped P-Type In0.53Ga0.47As on InP SubstrateJapanese Journal of Applied Physics, 1980
- Mg-doped InGaAsP/InP l.e.d.s for high-bit-rate optical-communication systemsElectronics Letters, 1979