Properties of Mn-doped p-type InxGa1-xAsyP1-y grown by liquid-phase epitaxy
- 31 May 1982
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 25 (5) , 359-365
- https://doi.org/10.1016/0038-1101(82)90120-4
Abstract
No abstract availableKeywords
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