Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy
- 1 August 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (8) , 839-844
- https://doi.org/10.1016/0038-1101(80)90100-8
Abstract
No abstract availableKeywords
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