Ge-doped GaxIn1−xAs LED’s in 1-μm wavelength region
- 1 January 1978
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 49 (1) , 450-452
- https://doi.org/10.1063/1.324357
Abstract
GaxIn1−xAs light‐emitting diodes which utilize Ge as a p‐type impurity were fabricated from LPE crystals. Use of a GaAs (111) A surface as a substrate and reduction of dislocation density by a continuous grading technique yield LED’s of 0.48% external quantum efficiency at 1.02‐μm wavelength. The electroluminescent response time of these diodes is the same order as that of GaAs LED’s which utilize Zn as a p‐type impurity.This publication has 8 references indexed in Scilit:
- A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrateApplied Physics Letters, 1975
- Efficient LPE-grown Inx Ga1 −x As LEDs at 1–1.1-μm wavelengthsApplied Physics Letters, 1974
- Ge-doped InxGa1−xAs p−n junctionsSolid-State Electronics, 1973
- Efficient 1.06-µm emission from InxGa1-xAs electroluminescent diodesIEEE Transactions on Electron Devices, 1972
- Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon OrientationJournal of Applied Physics, 1971
- Electroluminescence Characteristics and Efficiency of GaAs:Si DiodesJournal of Applied Physics, 1971
- Electroluminescence in Amphoteric Silicon-Doped GaAs Diodes. II. Transient ResponseJournal of Applied Physics, 1970
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969