Ohmic contacts of Au and Ag to p-GaSb
- 31 January 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (1) , 37-44
- https://doi.org/10.1016/0038-1101(94)90101-5
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Gallium antimonide device related propertiesSolid-State Electronics, 1993
- The use of generalised models to explain the behaviour of ohmic contacts to n-type GaAsSolid-State Electronics, 1992
- Recent developments in ohmic contacts for III–V compound semiconductorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Electrical properties of GaSb Schottky diodes and p-n junctionsMaterials Science and Engineering: B, 1992
- Properties of Au-Zn Ohmic contacts to p-GaSbJournal of Applied Physics, 1989
- Determining specific contact resistivity from contact end resistance measurementsIEEE Electron Device Letters, 1984
- Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformityIEEE Transactions on Electron Devices, 1983
- Ohmic contacts to p- and n-type GaSbInternational Journal of Electronics, 1983
- New explanation of N
D
−1 dependence of specific contact resistance for n -GaAsElectronics Letters, 1982
- Ohmic contacts for GaAs devicesSolid-State Electronics, 1967