Simulation of elevated temperature aluminum metallization using SIMBAD
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7) , 1599-1606
- https://doi.org/10.1109/16.141224
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Thin film microstructure simulation of RF bias planarized metal interconnects using a ballistic deposition modelPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Planarized aluminum metallization for sub-0.5 mu m CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Development of a planarized Al-Si contact filling technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling bias sputter planarization of metal films using a ballistic deposition simulationJournal of Vacuum Science & Technology A, 1991
- Simulation and measurement of density variation in Mo films sputter deposited over oxide stepsJournal of Vacuum Science & Technology A, 1990
- Simulation of density variation and step coverage for a variety of via/contact geometries using SIMBADIEEE Transactions on Electron Devices, 1990
- A Study on Radical Fluxes in Silane Plasma CVD from Trench Coverage AnalysisJapanese Journal of Applied Physics, 1989
- A new metallization technique for very large scale integrated structures: Experiments and computer simulationJournal of Vacuum Science & Technology B, 1986
- Significant improvement in step coverage using bias sputtered aluminumJournal of Vacuum Science & Technology A, 1986
- A general simulator for VLSI lithography and etching processes: Part II—Application to deposition and etchingIEEE Transactions on Electron Devices, 1980