On-wafer load pull characterization of W-band InP HEMT unit cells for CPW MMIC medium power amplifiers
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 4, 1743-1746
- https://doi.org/10.1109/mwsym.1999.780308
Abstract
A W-Band on-wafer, vector source and load pull system has been implemented and applied to the systematic determination of the optimum, large signal, input and output impedances of indium phosphide (InP) HEMT cells as a function of bias and high power RF drive. The large signal optimization of a variety of device styles and sizes, so as to achieve a priori W-band power and gain goals, resulted in an optimal HEMT cell geometry and first pass design success of W-band, finite ground coplanar waveguide (FGCPW) medium power amplifiers. These state-of-the-art amplifiers employing single 150 /spl mu/m and 250 /spl mu/m device cells deliver output powers of 13.8 dBm and 16.7 dBm with efficiencies of 23% and 17.5%, respectively.Keywords
This publication has 4 references indexed in Scilit:
- Millimeter-wave deembedding using the extended TRL (ETRL) approachPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band on-wafer load-pull measurement system and its application to HEMT characterizationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- W-band InP-based HEMT MMIC power amplifiers using finite-ground CPW designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Thru-Reflect-Line: An Improved Technique for Calibrating the Dual Six-Port Automatic Network AnalyzerIEEE Transactions on Microwave Theory and Techniques, 1979