On the validity of the gradual channel approximation for junction field effect transistors with drift velocity saturation
- 30 September 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (9) , 1047-1053
- https://doi.org/10.1016/0038-1101(73)90206-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Computer Aided Two-dimensional Analysis of the Junction Field-effect TransistorIBM Journal of Research and Development, 1970
- General theory for pinched operation of the junction-gate FETSolid-State Electronics, 1969
- Determination of Laplace-Poisson domain interfaceElectronics Letters, 1968
- Field-dependent mobility analysis of the field-effect transistorProceedings of the IEEE, 1965