The composition and structure of InGaAs/InAlAs interfaces at the monatomic scale
- 18 August 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (7) , 950-952
- https://doi.org/10.1063/1.119698
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Multilayers as Microlabs for Point Defects: Effect of Strain on Diffusion in SemiconductorsPhysical Review Letters, 1994
- Interface roughness scattering and electron mobility in quantum wiresApplied Physics Letters, 1992
- New methods for qualitative and quantitative analysis of the GaAs/AlGaAs interface by high-resolution electron microscopyUltramicroscopy, 1991
- Effect of Si movement on the electrical properties of inverted AlInAs–GaInAs modulation doped structuresApplied Physics Letters, 1991
- Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTsElectronics Letters, 1991
- Photoluminescence of GaAs quantum wells grown by molecular beam epitaxy with growth interruptionsApplied Physics Letters, 1991
- Quantitative chemical lattice imaging: theory and practiceUltramicroscopy, 1990
- The preparation of transmission electron microscope specimens from compound semiconductors by ion millingUltramicroscopy, 1987
- Interface roughness scattering in normal and inverted In0.53Ga0.47As—In0.52Al0.48As modulation-doped heterostructuresIEEE Electron Device Letters, 1986
- Contrast transfer of crystal images in TEMUltramicroscopy, 1980