Degradation rates of InGaAsP/InP BH lasers during accelerated aging
- 1 January 1981
- proceedings article
- Published by Optica Publishing Group
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3 µmJapanese Journal of Applied Physics, 1980
- 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperatureIEEE Journal of Quantum Electronics, 1979
- Zn-diffused, stripe-geometry, double-heterostructure GaInAsP/InP diode lasersIEEE Journal of Quantum Electronics, 1979
- Low-threshold 1.25-μm vapor-grown InGaAsP cw lasersApplied Physics Letters, 1979
- 1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasersApplied Physics Letters, 1977