Tunneling currents in reverse biased Hg1−xCdxTe photodiodes
- 31 May 1987
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 27 (3) , 143-151
- https://doi.org/10.1016/0020-0891(87)90002-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Gate-controlled Hg1−xCdxTe photodiodes passivated with native sulfidesJournal of Vacuum Science & Technology A, 1986
- Calculation of tunneling currents in (Hg,Cd)Te photodiodes using a two-sided junction potentialIEEE Transactions on Electron Devices, 1984
- Field induced tunneling in Hg1−xCdxTe photodiodesApplied Physics Letters, 1982
- Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristicsInfrared Physics, 1980
- Properties of ion-implanted junctions in mercury—cadmium—tellurideIEEE Transactions on Electron Devices, 1980
- Tunnel current limitations of narrow bandgap infrared charge coupled devices∗Infrared Physics, 1977