Laser-induced metal deposition on semiconductors from liquid electrolytes
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 736-738
- https://doi.org/10.1063/1.100877
Abstract
Maskless deposition of gold and copper from electrolytesolutions onto n‐doped semiconductors(GaAs, Si) is investigated. The metaldeposits are found to have lateral dimensions of about 1 μm and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p‐n junction, and the thermal emf.Keywords
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