Growth of Si1−xGex, Strained Layers Using Atmospheric-Pressure CVD
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Phonons and phase transitions in zirconiaJournal of Raman Spectroscopy, 1990
- Temperature dependence of growth of GexSi1−x by ultrahigh vacuum chemical vapor depositionApplied Physics Letters, 1990
- Relaxed GexSi1−x films grown by rapid thermal processing chemical vapor depositionApplied Physics Letters, 1990
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substratesJournal of Applied Physics, 1989
- Technological Prospects for Germanium Silicide EpitaxyMRS Proceedings, 1988
- Raman scattering from GexSi1−x/Si strained-layer superlatticesApplied Physics Letters, 1984
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- Light scattering from II–IV semiconductorsSolid State Communications, 1971