Condensed chlorine etching of GaAs induced by excimer laser radiation
- 17 August 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (7) , 828-830
- https://doi.org/10.1063/1.107758
Abstract
We report excimer‐laser‐induced etching of GaAs surfaces covered with a layer of condensed Cl2. The experiments were performed at low temperatures (120–150 K) and in a chlorine ambient (P=1–40 mTorr). Spatially well‐resolved, anisotropic etching has been demonstrated with an observed etch rate of 0.25 Å/pulse (0.1 μm/min for typical parameters). The etch rate is characterized as a function of the various system parameters (pressure, temperature, laser repetition rate, and fluence, etc.), and a model is proposed to describe the etching mechanism.Keywords
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