Infrared absorption of hydrogen in proton-implanted GaP
- 16 March 1981
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 64 (1) , K77-K80
- https://doi.org/10.1002/pssa.2210640165
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Vibrational properties of hydrogenated amorphous GaAsJournal of Non-Crystalline Solids, 1980
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- Controlled hydrogenation of amorphous silicon at low temperaturesApplied Physics Letters, 1979
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Bonding and thermal stability of implanted hydrogen in siliconJournal of Electronic Materials, 1975
- Infrarotspektroskopische Untersuchungen an kristallinem Phosphorwasserstoff, Phosphoniumbromid und PhosphoniumchloridBerichte der Bunsengesellschaft für physikalische Chemie, 1964