Anodic oxidation of InGaAsP
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 68-70
- https://doi.org/10.1063/1.91704
Abstract
Anodic oxides were successfully grown on n‐InGaAsP liquid phase epitaxial layers by 0.1‐M ammonium phosphate dibasic solution at current density of 0.2 mA/cm2. The as‐grown oxide was extremely uniform. The refractive indices of the grown quaternary oxide were found to be in the range of 1.6–1.75. The relationship of the oxide thickness to the cell voltage was linear with the slope of approximately 22 Å/V, not counting the initial cell voltage. The breakdown field of the oxide was around 3×106 V/cm. The anodization process on an epitaxial layer can be used to evaluate epitaxial layer quality. The process can also be used to ’’patch’’ up all the leaky spots of a diode.Keywords
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