Fabrication and electrical activity of twist boundaries in silicon

Publisher Website
Google Scholar
Abstract
Arrays of nearly impurity-free screw dislocations were produced in silicon with a new twist boundary fabrication technique. The electrical activity of these boundaries, studied with electron-beam induced current (EBIC), was found to increase linearly with the twist angle up to 1.6°, the largest angle studied. The EBIC contrast is relatively low and nearly the same in gettered and non-gettered wafers. If the boundary contrast is treated as the linear sum of the dislocation contribution, the EBIC contrast of a single screw dislocation appears to be very low, 0.005-0.008%. Kittler and Seifert's model (1981), then predicts 0.3-0.5 recombination sites over a dislocation length equal to the Burgers vector.
Keywords