Optimization and Characterization of 780 nm AlGaAs Quantum Well DFB Laser Diodes

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Abstract
AlGaAs quantum well DFB laser diodes with a wavelength of 780 nm have been fabricated using two-step MOVPE growth and EB lithography. Comparing several quantum well structures emitting 780 nm wavelength, the optimum structure was determined to be about 5 nm thick with a 0.06 Al mole fraction where low threshold current and low internal loss are realized. The GRIN-SCH structure with a carrier blocking layer was also utilized to improve the characteristic temperature of a two-step-growth laser diode. The resulting threshold current, characteristic temperature and spectral linewidth are 11 mA, 244 K and 760 kHz, respectively.