Anisotropic kinetics and bilayer epitaxial growth of Si(001)
- 15 November 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 40 (15) , 10617-10620
- https://doi.org/10.1103/physrevb.40.10617
Abstract
The epitaxial growth kinetics of Si(001) are investigated by the application of a Monte Carlo simulation, with explicit incorporation of the anisotropic bonding induced by the (2×1) dimer reconstruction. The model produces a pseudobilayer growth mode on a single-domain substrate and resolves apparently contradictory observations of Si homoepitaxial growth reported earlier by different groups.Keywords
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