Laser-induced chemical vapor deposition of polycrystalline Si from SiCl4
- 1 June 1980
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (11) , 930-932
- https://doi.org/10.1063/1.91377
Abstract
Polycrystalline Si films with average grain sizes of ∼8 μm have been grown by laser‐induced chemical vapor deposition from SiCl4. A cw CO2 laser operated at 10.6 μm was used to provide local heating of quartz substrates in an otherwise cool reactor to initiate the endothermic decomposition reaction. Deposition rates of 5.1 μm/min were obtained for films grown at an incident laser power of 18.9 W, resulting in sharply defined mesa structures due to the occurrence of the reverse reaction, etching of free Si, at cooler regions of the substrate surface closer to the edge of the 6‐mm irradiated zone. The diameter of the mesas was 1.4 mm with thicknesses up to 26 μm. Three modes of film growth, depending on the incident laser power, were observed.Keywords
This publication has 8 references indexed in Scilit:
- Laser-induced vapor deposition of siliconApplied Physics Letters, 1979
- Laser photodeposition of metal films with microscopic featuresApplied Physics Letters, 1979
- Chemical vapor deposition of silicon using a CO2 laserApplied Physics Letters, 1978
- Heating and melting of a film on a substrateJournal of Applied Physics, 1973
- Chemical Vapor Deposition of Electronic MaterialsAnnual Review of Materials Science, 1973
- Specific resistance of n+ -njunctionSolid-State Electronics, 1971
- General Equations for Gas Phase Compositions in Epitaxial Flow SystemsJournal of the Electrochemical Society, 1971
- The Equilibrium Behavior of the Silicon-Hydrogen-Chlorine SystemIBM Journal of Research and Development, 1964